Active Temperature Compensation for MEMS Capacitive Sensor
dc.contributor.author | Cuong, Do Danh | |
dc.contributor.author | Seshia, Ashwin A. | |
dc.date.accessioned | 2024-05-28T18:14:35Z | |
dc.date.available | 2024-05-28T18:14:35Z | |
dc.date.issued | 2021-09-01 | |
dc.identifier.uri | https://vinspace.edu.vn/handle/VIN/58 | |
dc.description.abstract | Temperature variations are one of the most crucial factors that need to be compensated for in MEMS sensors. Many traditional methodologies require an additional circuit to compensate for temperature. This work describes a new active temperature compensation method for MEMS capacitive strain sensors without additional circuits. The proposed method is based on a complement 2-D capacitive structure design. It consumes zero-power, which is essential toward the realization of a low-power temperature-compensated sensor in battery-powered or energy-harvesting applications. The gauge factor of the developed MEMS capacitive strain sensor is 7. The best result showing a capacitance variation of 1 ppm/◦C compared with 13 ppm/◦C on conventional design. | en_US |
dc.language.iso | en | en_US |
dc.subject | active temperature compensation | en_US |
dc.subject | complement 2-D capacitive structure | en_US |
dc.subject | strain gauge | en_US |
dc.title | Active Temperature Compensation for MEMS Capacitive Sensor | en_US |
dc.type | Article | en_US |
Các tập tin trong tài liệu này
Tài liệu này xuất hiện trong Bộ sưu tập
-
Do Danh Cuong, PhD [3]
Assistant Professor, Electrical Engineering program, College of Engineering and Computer Science